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    2022-12-27

Hailar Alpine Test |Global Power Technology supported the National New Energy Vehicle Technology Innovation Center to conduct the Alpine test of domestic semiconductors

  Forewords: In Hailar District, Hulunbuir City, Inner Mongolia, where the minimum temperature is as low as minus 40°C, the National New Energy Vehicle Technology Innovation Center (hereinafter “NEVC") is conducting "extreme low temperature" tests of domestic semiconductors.

  On December 11, 2019, the "extreme low temperature" testing led by the NEVC, with the participation of companies such as GPT, FAW New Energy, BAIC BJEW and FOTON, was tested at the alpine test base in Hailar District. The low temperature test is one of the test items for the verification of domestic automotive semiconductors.

  01 Hailar Alpine Test

  Since the beginning of December, the NEVC has brought domestic silicon-based IGBTs (insulated gate bipolar transistors), with GPT and other enterprises to Hailar to do a one-month low-temperature test with a cumulative total of 6,000 kilometers per vehicle to verify the performance and reliability of automotive semiconductors. Through repeated testing of the quality status and adaptability of the semiconductors in various extreme situations, as well as bench marking tests, to compare and analyze with foreign products, find problems and implement improvement measures, finally which can provide transparent testing certification and consulting services for domestic automotive semiconductor applications. According to reports, the domestic automotive semiconductor test verification is expected to complete in April 2020, when the test results will be released to the industry to accelerate the development of automotive application.

  02 Domestic top brand suppliers supporting

  The domestic silicon carbide diode supplier used in this test vehicle is GPT’s product.

  GPT is a third-generation semiconductor material silicon carbide power device manufacturing and application solution provider in China, which is not only a leading enterprise of silicon carbide devices, but also an emerging force supporting high-end manufacturing. As a domestic silicon carbide R&D, production and platform service company, GPT's product line involves various core technology products, silicon carbide power devices and multiple industry solutions. GPT has obtained IATF16949:2016 certification, and the products meet the high requirements of new energy vehicles for high-efficiency, small-size, low-temperature resistant.

  At present, GPT's silicon carbide power devices 650V/2A-100A, 1200V/2A-50A, 1700V/5A-50A, 3300V/0.6A-50A and other series of products have been put into mass production, and the product quality can be compared with international advanced level. The products have "positive temperature coefficient, easy to use in parallel, temperature-independent switching characteristics" and other characteristics, the operating temperature is -55°C to 175°C, and the working efficiency is stable in the environment of high and low temperature.

  From the high temperature test in August 2019 to the low temperature test in December, GPT has always verified the excellent quality and excellent performance of its products.

  Adhering to the national strategic requirements, integrating industry resources, and uniting semiconductor industry and the automotive industry to jointly conducted the "Domestic Independent Automotive Semiconductor Testing and Certification" project, the NEVC will greatly promote the rapid improvement of domestic semiconductor enterprises and technical levels represented by GPT, and promote the construction of China's automotive semiconductor standard system, testing and certification system construction and rapid iterative optimization of products.